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| ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* (Ta = 25) Symbol Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Total Device Dissipation Derate above 25 C Junction Temperature Storage Temperature Range O Value 50 50 5 500 625 5 150 -55 to +150 Unit V V V mA mW mW/ C O O O VCEO VCBO VEBO IC Ptot Tj TS C C *These ratings are limiting values above which the serviceability of semiconductor device may be impaired. Notes: 1) These ratings are based on a maximum junction temperature of 150 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/07/2003 ST 2N3416 / 2N3417 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=4.5V, IC=2mA Small Signal Current Gain at VCE=4.5V, IC=2mA, f =1kHz Collector Cutoff Current at VCB=25V at VCB=18V, Ta=100 Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=50mA, IB=3mA Base Saturation Voltage at IC=50mA, IB=3mA Collector Emitter Breakdown Voltage* at IC=10Ma Collector Base Breakdown Voltage at IC=10A Emitter Base Breakdown Voltage at IE=10A Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case *Pulse Test : Pulse width300s, Duty Cycle2%. Min. 75 180 75 180 0.6 50 50 5 - Typ. - Max. 225 540 100 15 100 0.3 1.3 200 83.3 Unit nA A nA V V V V V O O ST 2N3416 ST 2N3417 ST 2N3416 ST 2N3417 hFE hFE hfe hfe ICBO ICBO IEBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO RthA RthC C /W C /W SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/07/2003 |
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